Thermodynamic and Kinetic Studies of (iii-V)(1-X)(iv(2))(x) Semiconducting Thin Films

A theory to calculate (III-V)$\sb{\rm 1-x}$(IV$\sb2$)$\sb{\rm x}$ pseudobinary phase diagrams was developed. Activities of zincblende-structure and diamond-structure (III-V)$\sb{\rm 1-x}$(IV$\sb2$)$\sb{\rm x}$ solid solutions were derived. Good agreements between experimental and theoretical results for GaAs-Ge, BaSb-Ge, and GaAs-Sn systems were obtained. A model was developed to predict zincblende to diamond phase transformation would occur at x$\sb{\rm c}$ = 0.26. Single-phase polycrystalline (GaAs)$\sb{\rm 1-x}$(Sn$\sb2$)$\sb{\rm x}$ films were grown by Rf-sputter deposition with x up to 0.06 for V$\sb{\rm s}$ (substrate bias) = 75 V, and up to 0.17 for V$\sb{\rm s}$ = 225 V. The reaction path of metastable (GaAs)$\sb{\rm 1-x}$(Sn$\sb2$)$\sb{\rm x}$ alloys followed the sequence: (1) metastable single phase, (2) GaAs rich and α-Sn-rich phases, (3) α-Sn transformed into β-Sn, and (4) β-Sn transformed into liquid. No single phase metastable (GaAs)$\sb{\rm 1-x}$(Sn$\sb2$)$\sb{\rm x}$ alloys were obtained by annealing amorphous ion-mixed GaAs/Sn multilayer films, and the reaction path followed the sequence: (1) amorphous, (2) mixtures of (GaAs)$\sb{\rm 1-x}$(Sn$\sb2$)$\sb{\rm x}$ alloys, GaAs, β-Sn, and α-Sn, (3) α-Sn transformed into β-Sn, and (4) β-Sn transformed into the liquid phase.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Metallurgical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Fang, Shushan

Contributors dc:contributor

• Greene, J.E.

• Engineering, Materials Science

Identifier

(UMI)AAI8908676

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/71856