An in Situ Study of the Stresses in Silicide Thin Films

A novel technique has been introduced to determine the film stress of metal silicon interfaced materials in-situ. This technique requires the use of a spatially wide yet highly collimated white beam of synchrotron radiation, and a properly chosen filter. The technique is properly termed Absorption Edge Contour (AEC) Mapping. With the aid of a real time imaging system it is possible to observe changes in stress of silicide materials during various stages of film fabrication, as well as assess the character of the silicon substrate. Also another novel technique utilizing conventional x-rays is presented which allows one to determine the growth kinetics of a silicide material in-situ.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Metallurgical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• White, George Eugene

• Engineering, Materials Science

Identifier

(UMI)AAI8721783

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/71844