Oxygen Transport in Vapor-Deposited Tin-Doped Indium Oxide Films (Diffusion, Electrochemical)

Dense, polycrystalline films of Sn-doped In(,2)O(,3) were vapor deposited on yttria-stabilized zirconia solid electrolytes. Oxygen transport through the films was monitored between 1100 and 1300(DEGREES)K near atmospheric oxygen pressures using electrochemical techniques. An attempt was made to correlate the transport data to a diffusion model based on the defect chemistry of In(,2)O(,3); however, the evidence suggests that oxygen transport through these cells is controlled by the film-electrolyte interface. Low temperature electronic properties of the films were measured using the van der Pauw technique and were correlated to the tin content in the films. Finally, thermogravimetric and x-ray lattice parameter measurements were made on Sn-doped In(,2)O(,3) powder to provide additional support for the defect model.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Ceramics Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Enloe, Jack Harrison

• Engineering, Chemical

Identifier

(UMI)AAI8502135

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/71705