Back to results
University of Illinois at Urbana-Champaign
The Effect of Pressure on The Height of The Schottky Barrier for Several Semiconductors (Diodes, Metal-Contacts)
Abstract
dc:descriptionThis thesis contains the first measurements of the effect of pressure (to (TURN)10 kilobars) on the schottky barrier height at the metal-semiconductor interface. Results are presented for CdS, CdSe, and ZnO together with measurements of the absorption edges for CdSe and ZnO. These results are used in conjunction with previously published flatband potential measurements on GaAs and InP to relate the change in energy of the top of the valence band relative to the fermi level of the metal to the ionicity of the semiconductor. These measurements are compared to correlations of the change of the barrier height with the work function of the metal which have previously appeared in the literature.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Chemical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Peanasky, Michael John
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8521855
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/69757