University of Illinois at Urbana-Champaign
The Effects of High Pressure on The Photovoltage Spectrum of Cadmium-Sulfide and Cadmium-Selenide Schottky Diodes
Abstract
dc:descriptionThe effects of high pressure to 10 kilobars on the photovoltage spectrum of CdS and CdSe Schottky diodes has been investigated. These diodes exhibit a photovoltage at photon energies less than the energy gap of the semiconductor. This photovoltage is due to excitation of electrons from interface states to the conduction band of the semiconductor. A model where the interaction of the diode contact metal with the semiconductor surface gives rise to a sub-band of interface energy levels is used to explain the low energy response. Excitations from the sub-band also give rise to a recombination mechanism which causes a decrease in the photovoltage at photon energies slightly less than the semiconductor band gap energy. The recombination level is defined as the energy at which the recombination of photogenerated electrons and holes begins to dominate the photovoltage spectrum.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Chemical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Zurawsky, Walter Peter
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8502355
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/69750