High Pressure Effects on the Band Structure and Dye-Sensitized Photospectra of Semiconductors

The effect of high pressure (to 10 kilobars) on the band edge structure of n-TiO(,2), n-CdS, and n-CdSe has been investigated using an electrochemical technique. This study presents a novel method of measuring the energy of the band positions. It was found that the 3 meV/kbar increase in the band-gap (E(,g)) of TiO(,2) is due solely to a 3 meV/kbar increase in the conduction band edge energy (E(,C)), with the valence band edge (E(,V)) stationary. For CdS, the 5.1 meV/kbar increase in E(,g) is due to the 9.5-11.5 meV/kbar increase in E(,C) and the (calculated) 4.5-6.5 meV/kbar increase in E(,V). For CdSe, both E(,C) and E(,V) are lowered, with the more rapid lowering of E(,V) accounting for the increase of E(,g) with pressure. Comparisons with the literature are made.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

1983

Author dc:creator

• Gulino, Daniel Anthony

• Engineering, Chemical

Identifier

(UMI)AAI8409939

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69738