Acoustic Phonon Scattering in Modulation Doped Aluminum(x) Gallium(1-X) Arsenide/gallium Arsenide Heterojunctions

We investigate acoustic deformation potential scattering in Al$\sb{\rm x}$Ga$\sb{1-\rm x}$As/GaAs modulation doped heterojunctions. We review previous measurements of the deformation potential constant Z and discuss the controversy over the discrepancy between the measured value of Z in bulk GaAs and in the heterojunction. By comparing the theory of scattering in bulk GaAs with previously reported measurements of the mobility at 77 K we determine an upper limit for the deformation potential constant of 11 eV.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Manion, Stephen Joseph

Contributors dc:contributor

• Hess, Karl

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI8908766

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69415