The Trapped Charge Interfacial Modulation of the Electron Beam Induced Current in Metal Oxide Semiconductor Capacitors

Radiation-hardened (15) MOS capacitors were fabricated on 1-10 ohm-cm, p-type 100 silicon and were placed in the focal plane of a scanning electron microscope (SEM) to selectively populate and generate the oxide traps. As the electron beam scans from a region of the MOSC in the WRITE state to a region in the ERASE state, the electron beam induced current (EBIC) exhibits an abrupt reduction in the lateral current response--the trapped charge interfacial modulation (TCIM) of the EBIC. A new technique for extracting the Fu and Sah (23) device model parameters from a single spot-mode transient was developed. Using this technique, the excess-current component was separated from the lateral current component of the transient response. The lateral current was measured for both the WRITE and the ERASE states as a function of the applied gate bias to plot the characteristic curve which determines the magnitude of the TCIM turn-off transient and which accounts for the memory hysteresis of the device.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Deptuch, Roland George

Contributors dc:contributor

• Weber, Larry

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI8908665

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69410