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University of Illinois at Urbana-Champaign

Gain-Guided Aluminum-Gallium - Arsenide - Gallium-Arsenide Quantum-Well Heterostructure Lasers Fabricated by Hydrogenation

Abstract

dc:description

Semiconductor lasers have become the most widely utilized form of coherent light emitters. Aluminum gallium arsenide is the prototype material system in heterostructure laser technology. New fabrication techniques that are simple and easily implemented with present technology may have an impact on laser manufacturing. Hydrogenation is such a process.

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Electrical Engineering
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2014

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Jackson, Gordon Stuart

Subjects

dc:subject × 1

Identifiers

dc:identifier.*
Identifier
(UMI)AAI8823154
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/69398

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Jackson, Gordon Stuart. Gain-Guided Aluminum-Gallium - Arsenide - Gallium-Arsenide Quantum-Well Heterostructure Lasers Fabricated by Hydrogenation. Dissertation thesis, University of Illinois at Urbana-Champaign, 2014. http://hdl.handle.net/2142/69398