Back to results
University of Illinois at Urbana-Champaign
Internal Photoemission and Energy Band Discontinuities at Semiconductor Heterojunctions
Abstract
dc:descriptionA new technique has been developed to measure the conduction band discontinuities ($\Delta$E$\sb{\rm c})$ at certain semiconductor heterojunctions. The technique involves measuring the spectral response of specially designed p$\sp{+}$N$\sp{-}$ heterojunction photodiodes. Internal photoemission from the valence band of the p$\sp{+}$ layer is observed in these devices and power law fits are used to accurately extract the threshold energy. A simple calculation then gives the size of the conduction band heterobarrier. Subsequent analysis of small barrier lowering effects allows $\Delta$E$\sb{\rm c}$ to be deduced directly, accurately, and reliably.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Haase, Michael Albert
- Contributors dc:contributor
-
- Stillman, Gregory E.
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8823138
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/69397