Circuit Simulation Models for the High Electron Mobility Transistor

The high electron mobility transistor (HEMT) is one of the fastest switching devices available today. In order to best utilize its capabilities one must be able to simulate its behavior in electronic circuits. This requires an efficient and accurate mathematical model for both dc and ac analysis which must be installed in a general purpose circuit simulation program. In this thesis, two such models which accomplish these purposes are presented.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Cioffi, Kenneth Robert

Contributors dc:contributor

• Trick, Timothy N.

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI8803003

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69369