Automated Variable Temperature Hall Effect Measurements and Analysis of N-Type Gallium-Arsenide, Indium-Phosphide and Their Lattice Matched Alloy Semiconductors (Hall Effect)

A thorough background to the theoretical analysis of Hall effect carrier concentrations and mobilities in n-type GaAs, InP, and their related direct gap semiconductor alloys is presented along with a thorough treatment of those factors affecting the measurement. The design and construction of the equipment used to make measurements from 4.2 K to 373 K are described. The programming required both for the control of the measurements and the analysis of the data is discussed in detail. Results are presented for high purity n-type GaAs, InP and In(,0.53)Ga(,0.47)As.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Lepkowski, Thomas Richard

• Physics, Electricity and Magnetism

Identifier

(UMI)AAI8511635

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69301