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University of Illinois at Urbana-Champaign

Operating Range of Aluminum - Gallium-Arsenide Quantum-Well Heterostructure Lasers: Tunability, Power Output, and High Energy Emission (Semiconductor, Optical, Diode)

Abstract

dc:description

A quantum-well heterostructure (QWH) is the most capable form of semiconductor laser. The quantum-size effect (QSE), inherent in a QWH laser, improves the device performance compared to conventional double heterostructure lasers. One advantage provided by the QSE is the increased possibility for carrier bandfilling of the active region. Experimental results are presented in which the continuous (CW) emission wavelength of an Al(,x)Ga(,1-x)As-GaAs QWH laser diode is tuned over a 100-meV spectral range (with the aid of an external grating cavity). The single 90-(ANGSTROM) quantum well is an ideal active region to provide broadband (7800-8300 (ANGSTROM)) optical gain.

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Electrical Engineering
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2014

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Epler, John Edward

Subjects

dc:subject × 1

Identifiers

dc:identifier.*
Identifier
(UMI)AAI8511604
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/69300

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Epler, John Edward. Operating Range of Aluminum - Gallium-Arsenide Quantum-Well Heterostructure Lasers: Tunability, Power Output, and High Energy Emission (Semiconductor, Optical, Diode). Dissertation thesis, University of Illinois at Urbana-Champaign, 2014. http://hdl.handle.net/2142/69300