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University of Illinois at Urbana-Champaign
Two-Dimensional Simulation of the High Electron Mobility Transistor
Abstract
dc:descriptionThe High Electron Mobility Transistor (HEMT), a recently developed electronic device which takes advantage of the excellent conduction properties of modulation-doped GaAa/AlGaAs semiconductors, has been shown to perform well for both high-speed digital and analog applications. Switching speeds on the order of 10 ps and transconductances in excess of 400 mS/mm have been demonstrated.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Widiger, David James
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8502341
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/69296