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University of Illinois at Urbana-Champaign
Growth, Characterization and Application of Aluminum-Gallium - Arsenide/gallium-Arsenide Modulation Doped Heterostructures
Abstract
dc:descriptionModulation doped heterostructures show great potential for being the basis of a new family of high speed electronic devices, including photodetectors, charge-coupled devices and field effect transistors. This has motivated an extensive study of the growth and physical properties of Al(,x)Ga(,1-x)As/GaAs heterostructures. Molecular beam epitaxy is the preferred crystal growth technology for this structure because of the ease with which high quality epitaxial layers and abrupt compositional and doping profiles may be obtained.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Drummond, Timothy J.
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8409912
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/69274