Experimental Studies of Lateral Electron Transport in Gallium-Arsenide - Aluminum-Gallium - Arsenide Heterostructures

The electron-transport characteristics of modulation-doped GaAs-Al(,x)Ga(,1-x)As heterostructures have been measured over a wide range of temperatures using a diverse set of device structures. Short voltage pulses were used to apply a broad range of lateral (parallel to the interface) electric fields and the resulting current-field characteristics were determined using a sampling oscilloscope and x-y recorder.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Keever, Mark Robert

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI8309967

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69250