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University of Illinois at Urbana-Champaign
Swept Line Electron Beam Annealing of Ion-Implanted Semiconductors
Abstract
dc:descriptionThe capabilities of a Swept Line Electron Beam (SLEB) in annealing ion-implanted semiconductors are examined. This technique employs a fixed geometry, line-shaped electron beam through which implanted samples are mechanically scanned. In general, this technique can produce annealing results comparable or superior to those achievable by conventional furnace annealing.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Soda, Kenneth James
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8302990
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/69245