The Characterization of Liquid Phase Epitaxial Indium-Gallium - Arsenide - Phosphide and Indium-Gallium - Arsenide

The growth of InGaAsP and InGaAs by liquid phase epitaxy (LPE) on InP substrates has been investigated to obtain the optimum crystal growth parameters to produce high quality epitaxial layers. The lattice mismatch of these layers with respect to the underlying InP substrate was determined by X-ray diffraction, and the energy gap was obtained by optical spectrophotometer transmission measurements. The distribution coefficients for the growth of lattice matched InGaAsP in the 1.15 to 1.31 (mu)m spectral region were determined. The surface morphology of the epitaxial layers was found to be more sensitive to lattice mismatch for the longer wavelength material ((lamda)(,g) > 1.21 (mu)m). A detailed study of the influence of the melt composition on the composition of the resultant epitaxial layers was conducted for (lamda)(,g) = 1.15 (mu)m InGaAsP. The effect of the growth temperature on the solid composition of the layers was determined. Constant composition layers are produced by growth at a constant temperature, while growth techniques involving a cooling rate produce compositionally graded material. The addition of dopants to the melt was shown to influence both the lattice mismatch and energy gap. Auger profiling was used to study the effect of lattice mismatch on the chemical interface abruptness of InGaAsP/InP heterojunctions and the effect of dissolution on the interface of InGaAs/InGaAsP heterojunctions.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Tashima, Mark Masato

• Engineering, Electronics and Electrical
• Energy

Identifier

(UMI)AAI8203612

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69226