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University of Illinois at Urbana-Champaign
Vapor Phase Epitaxial Growth of Gallium Arsenide, Indium Phosphide, and Indium Gallium Arsenide by the Hydride Technique
Abstract
dc:descriptionThe use of InGaAsP alloys for optical fiber communication systems is discussed. The advantages and various types of vapor phase epitaxial growth systems are examined before looking at the open tube growth process in detail. Using the criteria for high purity systems, which are thoroughly reviewed, a vertical hydride system capable of growing InGaAsP alloys has been built. The initial growth of GaAs and InP is described and problems encountered with the use of this semi-automatic system are examined.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Zinkiewicz, Lawrence Martin
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8114506
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/66248