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University of Illinois at Urbana-Champaign

Tunneling in the Iii-v Semiconductor Alloys Indium Gallium Phosphide, Gallium Aluminum Arsenide, and Gallium Arsenide Phosphide

Abstract

dc:description

Made available in DSpace on 2014-12-10T19:06:52Z (GMT). No. of bitstreams: 1 7212254.pdf: 3159809 bytes, checksum: 3806fd4032e22d4e943204391b117cec (MD5) Previous issue date: 1971

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Electrical Engineering
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2014

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Korb, Harold Wilfred

Subjects

dc:subject × 1

Identifiers

dc:identifier.*
Identifier
(UMI)AAI7212254
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/63000

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Korb, Harold Wilfred. Tunneling in the Iii-v Semiconductor Alloys Indium Gallium Phosphide, Gallium Aluminum Arsenide, and Gallium Arsenide Phosphide. Dissertation thesis, University of Illinois at Urbana-Champaign, 2014. http://hdl.handle.net/2142/63000