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University of Illinois at Urbana-Champaign

Modeling of Joule heating and thermoelectric transport in thin film silicon for SJEM measurement

Abstract

dc:description

This thesis reports the finite element modeling of a quantitative nanometer-scale temperature distribution along the doped Si devices. The modeling replicates data acquisition technique of Scanning Joule expansion microscopy (SJEM). Time varying heat equations and Maxwell’s equations are solved in frequency domain and applied to commercial finite element software, COMSOL. Chapter 1 introduces various techniques to obtain nanoscale temperature distribution. In Chapter 2, Joule heating and Thermoelectric heating in 1st harmonic and 2nd harmonic signals are analyzed by comparing the terms in governing equations and simulation results. Chapter 3 optimizes device design of doped Si and experimental conditions for future measurement. The approach used in Chapter 2 is expanded in Chapter 4 to understand thermoelectric behaviors in 500 nm thick boron doped p-type and phosphorus doped n-type Si devices with doping levels of 1019 cm-3 and 1018 cm-3. PtSi or NiSi Ohmic contacts are formed on the devices and thermoelectric behaviors are analyzed in conditions either under simultaneous DC and AC excitations, or AC only excitations. The simulation results show that thermoelectric contribution in heating increases with the product of electrical conductivity and Seebeck coefficient. Chapter 5 explains the future plan for the device fabrication and platform for contact resistance measurements. The studies in this thesis can extend to Schottky contact devices and further complicated structures for understanding heat and thermoelectric transport in specific frequency.

Degree

thesis:*
Name thesis:degree_name
M.S.
Level thesis:degree_level
Thesis
Discipline thesis:degree_discipline
Mechanical Engineering
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2014

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Koh, Youngjoon
Contributors dc:contributor
  • King, William P.

Subjects

dc:subject × 5

Rights

dc:rights
Statement dc:rights
  • Copy right 2014 Youngjoon Koh
Language dc:language
en

Identifiers

dc:identifier.*
Handle dc:identifier
http://hdl.handle.net/2142/49679
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/49679

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Koh, Youngjoon. Modeling of Joule heating and thermoelectric transport in thin film silicon for SJEM measurement. Thesis thesis, University of Illinois at Urbana-Champaign, 2014. http://hdl.handle.net/2142/49679