Optimization of purely semiconducting carbon nanotube complementary field effect transistors

Among the remarkable variety of semiconducting nanomaterials that have been discovered, single walled carbon nanotubes (SWNTs) have properties that make them uniquely well suited for high-performance carbon nanotube field-effect transistors (CNTFETs). The most advanced opportunities, however, demand optimized properties of semiconducting SWNTs in horizontal arrays. Here, we present strategies that optimize CNTFETs by using an array-based metallic nanotube removal process with joule heating induced thermocapillary flow in thin organic layers. Detailed experimental studies reveal the selective removal of metallic SWNTs. We provide statistically significant demonstrations to prove the effectiveness and selectivity of this approach and to study the underlying physics of joule-induced thermocapillary flow, and we present several demonstrations of electronic devices based on aligned arrays (both purified and unpurified) along with detailed characterization of their performance.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2013

Author dc:creator

• Kim, Ji Hun

Contributors dc:contributor

• Rogers, John A.

• carbon nanotube
• carbon nanotube field-effect transistors

Statement dc:rights

• Copyright 2012 Ji Hun Kim

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/42442

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/42442