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University of Illinois - Urbana-Champaign

Liquid-phase-epitaxial growth and properties of indium gallium phosphide and indium gallium phosphide arsenide injection lasers

Abstract

dc:description

Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-22T19:29:54Z No. of bitstreams: 1 1975_hitchens.pdf: 4073212 bytes, checksum: 83d0ce7d426078eaafd0df098ca21fa1 (MD5)

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Physics
Year dc:date
2012

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Hitchens, William Robert
Contributors dc:contributor
  • Holonyak, Nick, Jr.

Subjects

dc:subject × 6

Rights

dc:rights
Statement dc:rights
  • ©1975 Hitchens
Language dc:language
en

Identifiers

dc:identifier.*
Identifier
2231651
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/30740

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Hitchens, William Robert. Liquid-phase-epitaxial growth and properties of indium gallium phosphide and indium gallium phosphide arsenide injection lasers. Dissertation thesis, 2012. http://hdl.handle.net/2142/30740