Optical studies of III-V quantum wires grown by strain induced lateral ordering (SILO) process

A host of optical techniques have been utilized to carefully study the quantum wires grown via strain induced lateral ordering (SILO) which is a bulk thermodynamics driven self-ordering process. Fourier transform photoluminescence (FTPL) measurements have been employed to study the polarization anisotropy in the emission from these structures. Photoluminescence power dependence and photoluminescence excitation spectroscopy is used along with the FTPL results to confirm the formation of quantum wires by the SILO process and to assess the presence of strain and the extent of Cu-Pt type ordering in these multiple quantum wire arrays. Evolution of the entire luminescence band after excitation is studied with the time-resolved photoluminescence measurements. The interface defect density in SILO wires is found to be considerably smaller than that of the wires fabricated with conventional techniques. Recombination is dominated by exciton recombination up to the room temperature. Carrier relaxation in quantum wires is studied for the intermediate temperature range. A characterization technique is developed to estimate the extent and shape of the spontaneously created composition modulation. The technique, based on resonant Raman spectroscopy, is general and can be utilized to map out composition regions in any semiconductor microstructure. Computer simulations were performed to confirm the validity of this technique.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Year dc:date

2012

Author dc:creator

• Dua, Praveen

Contributors dc:contributor

• Cooper, S. Lance

• quantum wires
• strain induced lateral ordering

Statement dc:rights

• ©1997 Dua

Language dc:language

en

Identifier

4040176

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/30696