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University of Illinois - Urbana-Champaign
Properties of 1-MeV-electron-irradiated defect centers in silicon
Abstract
dc:descriptionSubmitted by William Weathers (weathrs2@illinois.edu) on 2012-04-16T20:29:19Z No. of bitstreams: 1 1973_walker.pdf: 5673840 bytes, checksum: 77c227488910fbfd181b9a6cf8e1c808 (MD5)
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Physics
- Year dc:date
- 2012
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Walker, James Wiley
- Contributors dc:contributor
-
- Sah, C.T.
Subjects
dc:subject × 2Rights
dc:rights- Statement dc:rights
-
- ©1973 Walker
- Language dc:language
- en
Identifiers
dc:identifier.*- Identifier
- 2367987
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/30654