Observation of plasma sheath modulation in the plasma bipolar junction transistor

Modulation of the plasma sheath in a plasma bipolar junction transistor (PBJT) is observed for base inputs of less than one volt. Using the recorded data, along with a collisional, high-voltage sheath model developed herein, a 359% increase in the secondary electron emission coefficient of the exposed silicon surface is inferred. Additionally, the pressure dependence of these devices is explored, with the data suggesting that smaller devices would exhibit both faster switching and higher small signal gains.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2012

Author dc:creator

• Houlahan, Thomas

Contributors dc:contributor

• Eden, James G.

• plasma
• bipolar junction transistor
• sheath

Statement dc:rights

• (c) 2011 Thomas J. Houlahan Jr.

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/29761

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/29761