Studies of Field-Induced Stress on Ultrathin Layers of Silicon Dioxide on a Silicon Substrate

We present here the results of an STM study of ultrathin silicon dioxide layers on a silicon substrate. We have found that under certain conditions, structures subjected to field-induced stress with the STM exhibit changes in their conductivity which we believe are evident in the images as the voltage of the STM is varied. We focus here on that subset of field stress parameters yielding structures which specifically exhibit this conductivity change.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Year dc:date

2011

Author dc:creator

• Archer, Allan P.

Contributors dc:contributor

• Nayfeh, Munir H.

• silicon dioxide

Statement dc:rights

• © 2001 Allan P. Archer

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/28333

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/28333