Low temperature annealing of electron irradiated germanium

N-type germanium (4.X 1014 Sb/cm3) has been irradiated with 1.1 MeV electrons at SOK. The defects produced have been studied by measuring the voltage-dependent capacitance of a metal-germanium junction formed at the surface of a germanium sample. These measurements were made at lOoK and directly gave the fixed charge density near the surface of the sample. The production and recovery of defects seen near the surface is the same.as seen in bulk experiments. A 0.5 MeV electron beam was used to cause radiation annealing of the defects at 5OK. The fraction recovered during radiation annealing is directly proportional to Jt. A model based on diffusion-limited recovery theory is used to explain these results. This model is also used to discuss the results of previous·experiments. The temperature dependence of the observed recovery at 5OKgave a defect migration energy of 0.0044 ± 0.0008 eVe

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Year dc:date

2011

Author dc:creator

• Hyatt, William D.

Contributors dc:contributor

• Koehler, James S.

• low temperature annealing
• electron irradiated germanium
• n-type germanium

Statement dc:rights

• 1970 William D. Hyatt

Language dc:language

en

Identifier

6054223

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/25844