Transmission of far infrared radiation through thin films of superconducting amorphous bismuth and gallium

The ratio Ts /Tn of the far infrared radiation transmitted through a thin film in the superconducting state to that transmitted through it in the normal state has been measured for several samples of amorphous bismuth and gallium. The transition temperature Tc of each film was also measured. Thicknesses were approximately in the range 50 to 200 ~. Numerical calculations based on the strong-coupling theory of superconductivity and on tunneling data produced theoretical values of Ts /Tn for comparison with the data, showing moderately good agreement. For each sample the energy gap 2wg was determined. For bismuth and gallium, Tc and 2wg decrease with increasing film resistance. It was also noted that for both materials, the abrupt resistance change at about 15 K, characteristic of thicker amorphous films, appeared instead as a gradual change in resistance beginning at temperatures higher than 20 K.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Year dc:date

2011

Author dc:creator

• Harris, Richard Elgin

Contributors dc:contributor

• Ginsberg, D.M.

• far infrared radiation
• superconducting thin films
• amorphous bismuth
• amorphous gallium

Statement dc:rights

• 1969 Richard Elgin Harris

Language dc:language

en

Identifier

6074596

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/25790