Surface studies of group IV-VI layered crystals

The surface structure of TiS2 has been investigated by low energy electron diffraction (LEED). No surface reconstruction was observed and comparison of LEED intensity data with theory suggests a slight outward relaxation of atomic planes at the surface. The LEED pattern for a crystal cleaved at a temperature below the charge density wave transition exhibited a 2ao x 2ao surface superlattice. The electronic band structures for TiS2e and TiS2 have been investigated by angle resolved photoemission spectroscopy. Excitation is provided by He I (21.2 eV) and He II (40.8 eV) ultraviolet radiation. The results indicate that TiSe2 a semimetal with a band overlap of less than 0.25 eV, while TiSi2 a semiconductor. These measured bands are in good agreement with recent theoretical band calculations.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Year dc:date

2011

Author dc:creator

• Fabian, Walter

Contributors dc:contributor

• Brown, Frederick C.

• group IV-VI layered crystals
• surface structure
• low energy electron diffraction (LEED)
• atomic planes

Statement dc:rights

• 1978 Walter Fabian

Language dc:language

en

Identifier

356085

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/25596