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University of Illinois - Urbana-Champaign

Raman scattering studies of aluminum gallium arsenide based semiconductor superlattices

Abstract

dc:description

Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-07T18:26:47Z No. of bitstreams: 1 1984_colvard.pdf: 4295312 bytes, checksum: ce5ff950ef04db12f158f3816d50fdc1 (MD5)

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Physics
Year dc:date
2011

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Colvard, Carl Edward
Contributors dc:contributor
  • Klein, Miles V.

Subjects

dc:subject × 3

Rights

dc:rights
Statement dc:rights
  • 1984 Carl Edward Colvard
Language dc:language
en

Identifiers

dc:identifier.*
Identifier
824804
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/25346

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Colvard, Carl Edward. Raman scattering studies of aluminum gallium arsenide based semiconductor superlattices. Dissertation thesis, 2011. http://hdl.handle.net/2142/25346