1/f noise in semiconductors and metals

The nature of l/f noise in semiconductors and metals has been analyzed in light of the information provided by some unique, empirically determined parameters. Measurements of the instantaneous resistivity fluctuation isotropy, of the Hall noise magnitude and of the correlation between Hall noise and resistivity noise are presented. Results bearing on the Gaussian nature and the spatial coherence of l/f noise are also given. The discovery of thermally activated spectral features in the noise from silicon-on-sapphire (SOS) samples is documented. A model for the origin of l/f noise in SOS and one for that in bismuth are described. Possible generalizations of these findings are commented on.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Black, Robert Douglas

Contributors dc:contributor

• Weissman, Michael B.

• 1/f noise
• semiconductors
• metals
• instantaneous resistivity flucturation isotropy
• Hall noise
• resistivity noise

Statement dc:rights

• Copyright 1984 Robert Douglas Black

Language dc:language

en

Identifier

810373

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/25337