Neutron irradiation effects in gallium arsenide

Changes in electrical properties of n-GaAs as a result of irradiations with fast neutrons have been studied, after epitaxial layers doped with Si at concentrations in the range 1.35 $\times$ 10$\sp{15}$ to 1.60 $\times$ 10$\sp{16}$ cm$\sp{-3}$ were irradiated with reactor neutron fluences up to 1.31 $\times$ 10$\sp{15}$ cm$\sp{-2}.$ When the changes in carrier concentration, Hall mobility and resistivity were more than 25% of their initial values, nonlinear dependence on neutron fluence was apparent. New theory is proposed which explains the changes in electrical properties in terms of rates of trapping and release of charges. A theoretical relationship is derived for the change in carrier concentration as a function of neutron fluence and doping level. A linear relationship between neutron fluence and Fermi level shift was found to be consistent with the observed changes in carrier concentration.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Engineering, Electronics and Electrical

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Patel, Jagdishbhai Umedbhai

Contributors dc:contributor

• Williams, J.G.

• Engineering, Electronics and Electrical
• Engineering, Nuclear

Statement dc:rights

• Copyright 1992 Patel, Jagdishbhai Umedbhai

Language dc:language

eng

Identifier

AAI9305650
(UMI)AAI9305650

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/23696