Design, fabrication, and characterization of indium phosphide-based heterostructure field-effect transistors for high-power microwave applications

InP-based heterostructure field effect transistors (HFETs) have, over the past several years, demonstrated microwave performance capabilities superior to those of GaAs-based and Si-based transistors. In particular, InGaAs/InAlAs modulation-doped field effect transistors (MODFETs) have exhibited world-record unity current gain frequencies ($f\sb{t}$s) as well as extremely high power cutoff frequencies ($f\sb{\rm max}$s) and have, therefore, become the optimum devices for small-signal applications at high frequencies, particularly in low-noise applications. Despite these strengths, InP-based HFETs have inherent weaknesses which limit their capabilities for large-signal, high output power applications. Due to a combination of the poor Schottky characteristics of InAlAs, which is often the material in contact with the metal gate, and the small bandgap of InGaAs, which is the material often used for the channel, the devices typically have lower breakdown voltages than their GaAs counterparts. However, because of the phenomenally high values of $f\sb{t}$ and $f\sb{\rm max}$ obtainable for these devices, there has been a growing desire to overcome these weaknesses in order that the devices can be used for high-power applications at microwave frequencies.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Ballegeer, Daniel Gerard

Contributors dc:contributor

• Adesida, Ilesanmi

• Engineering, Electronics and Electrical

Statement dc:rights

• Copyright 1995 Ballegeer, Daniel Gerard

Language dc:language

eng

Identifier

AAI9543523
(UMI)AAI9543523

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/23436