Optimization of the reactive magnetron sputter deposition, and studies of hydrogen diffusion in hydrogenated amorphous silicon based materials

The applications of hydrogenated amorphous silicon in photovoltaic devices have been hindered due to two key problems: the light-induced metastable defect creation and poor doping. To improve these properties, I have chosen the reactive magnetron sputtering method for the growth of a-Si:H and its doped alloys. The advantages of this technique are the independent control of hydrogen incorporation via the pressure of H$\sb2$ injected into the plasma, and the energetic nature of the deposition species. The effects of growth parameters on the electrical and microstructural properties have been studied, and the films appear to be optimized.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Liang, Yuehai Harry

Contributors dc:contributor

• Abelson, John R.

• Engineering, Electronics and Electrical
• Engineering, Metallurgy
• Engineering, Materials Science

Statement dc:rights

• Copyright 1996 Liang, Yuehai Harry

Language dc:language

eng

Identifier

AAI9625158
(UMI)AAI9625158

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/23334