Photo-Hall studies of compound semiconductors

The III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave device applications. Temperature dependent photo-Hall effect measurements have been made on the high purity compound semiconductors GaAs, InP and a ternary alloy In$\sb{0.53}$Ga$\sb{0.47}$As. The major emphasis of this work involves the phenomenon of persistent photoconductivity. This phenomenon has been used to facilitate the electrical characterization of homogeneous and inhomogeneous thin epitaxial semiconductor layers. This effect is associated with a reduction in the surface and substrate interface depletion that occurs upon illumination of the sample with above band gap light at cryogenic temperatures. After illumination, the effects of a photoinduced charge neutral region persists, until at higher temperatures, the sample relaxes back to its original state. For homogeneous layers, the mobility, which is a measure of the microscopic quality of the crystal, remains unchanged after illumination. The persistent photoeffect strictly results from the increase in the effective electrical thickness of the layer. By utilizing the persistent photoeffect, electrical measurements have been made on thin high purity GaAs, which was semi-insulating in the dark because of surface and interface depletion.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Kim, Matthew Hidong

Contributors dc:contributor

• Stillman, Gregory E.

• Physics, Condensed Matter

Statement dc:rights

• Copyright 1989 Kim, Matthew Hidong

Language dc:language

eng

Identifier

AAI8916271
(UMI)AAI8916271

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/23287