Characterization of S-bend optical waveguides fabricated by impurity- and vacancy-induced layer disordering

The routing capabilities of waveguides defined by Zn, SiO$\sb2$, and In/SiO$\sb2$ Impurity-Induced Layer Disordering (IILD) of a single GaAs quantum-well graded barrier laser structure are investigated using raised-cosine S-bend geometries. The 3-dB transition length for a 100 μm offset S-bend waveguides fabricated using the Zn, SiO$\sb2$, or In/SiO$\sb2$ IILD process is less than 300 μm for near single-mode guides. In addition, vacancy-induced layer disordering (VILD) of the native quantum-well region is investigated and is shown to increase the band gap to a point at which the material is low-loss for radiation generated by a laser made from the native material. The 3-dB length for these blue-shifted waveguides decreases to about 230 μm due to reduced mode conversion. This VILD technique is also used to fabricate lasers with various blue-shifted emission wavelengths. Secondary Ion Mass Spectroscopy (SIMS) is used to study the separate and co-diffusions of silicon and indium from thin film sources. Indium is inferred to have a higher diffusion coefficient than silicon in GaAs and AlGaAs and to result in a similar degree of impurity-induced disordering of the single quantum-well laser structure.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Tang, Tony Kai Tung

Contributors dc:contributor

• DeTemple, Thomas A.

• Engineering, Electronics and Electrical
• Physics, Electricity and Magnetism
• Physics, Condensed Matter

Statement dc:rights

• Copyright 1991 Tang, Tony Kai Tung

Language dc:language

eng

Identifier

AAI9211008
(UMI)AAI9211008

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/23284