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University of Illinois at Urbana-Champaign
Millimeter-wave low-noise amplifiers using cost-effective ion-implanted MESFETs and coplanar transmission lines
Abstract
dc:descriptionThis dissertation describes the design and implementation of a monolithic 38 GHz low-noise amplifier using 0.25 μm ion-implanted GaAs MESFETs and coplanar waveguide transmission lines. It describes the development of low-noise GaAs FETs, measurement and modeling of active and passive components, circuit design, simulation, fabrication, and characterization of the completed amplifiers.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical and Computer Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2011
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Scherrer, Doniel Raymond
- Contributors dc:contributor
-
- Feng, Milton
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- Copyright 1996 Scherrer, Doniel Raymond
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
-
9780591200263
AAI9712429
(UMI)AAI9712429 - OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/23183