Long wavelength infrared detectors utilizing multiple quantum wells in III-V compound semiconductors

Data are presented on various infrared detectors based on multiple GaAs/AlGaAs quantum wells. Due to the great flexibility in the growth, dimensions, and composition of these structures, the electrical and optical characteristics of the photodetector may be significantly altered. This investigation explores both theoretically and experimentally the effect of modifying the well and barrier parameters.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Dodd, Mark Alan

Contributors dc:contributor

• Stillman, Gregory E.

• Engineering, Electronics and Electrical
• Physics, Electricity and Magnetism
• Physics, Radiation

Statement dc:rights

• Copyright 1994 Dodd, Mark Alan

Language dc:language

eng

Identifier

AAI9503177
(UMI)AAI9503177

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/23069