Strain at surface and interface steps

Transmission Electron Microscopy (TEM) is a powerful tool for the study of interface and surface phenomena. Its sensitivity to lattice plane orientation allows for the imaging of crystal strain. In this thesis, I will present a unique method for quantitatively measuring crystal strain using TEM. This method relies on the quantitative comparison of experimental and simulated dark field images. Employing this technique has allowed for the measurement of strain at surface and interface steps for the first time. It will be shown that a Si(111) 7 x 7 surface step possesses appreciable long range strain. This strain increases by more than an order of magnitude for Si(111)/Ge and Si(111)/SiO$\sb2$ interface steps. The presence of strain has important consequences for surface and interface properties, and these are briefly discussed.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Pohland, Oliver Hermann

Contributors dc:contributor

• Gibson, J. Murray

• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1996 Pohland, Oliver Hermann

Language dc:language

eng

Identifier

9780591088243
AAI9702639
(UMI)AAI9702639

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/22825