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University of Illinois at Urbana-Champaign
Impact ionization and high-field transport in semiconductors
Abstract
dc:descriptionAspects of high field transport related to hot electron reliability effects are investigated--with special emphasis, the phenomenon of impact ionization. Both the ionization rate itself and its effect on bulk semiconductor transport are computed by a full-band Monte Carlo algorithm for Si and several III-V materials. Furthermore, a new interpretation of hot carrier luminescence spectra is given which can explain important features of hot electron distribution functions in MOSFETs.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical and Computer Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2011
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Bude, Jeffrey Devin
- Contributors dc:contributor
-
- Hess, Karl
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- Copyright 1992 Bude, Jeffrey Devin
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
-
AAI9236404
(UMI)AAI9236404 - OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/22805