Fabrication and characterization of compound semiconductor nanostructures

Semiconductor optoelectronic devices are expected to have their performance improved by the use of quantum confinement in the active region with sizes in the range of tenths of nanometers. The decrease in volume of the active region and the modification in the density of states in quantum structures is predicted to improve the threshold current, increase the modulation bandwidth, yield narrower spectral linewidths, and reduce temperature sensitivity in semiconductor lasers. This thesis reports the development and characterization of several fabrication techniques of compound semiconductor nanostructures on $\rm In\sb{0.53}Ga\sb{0.47}As/InP$ and $\rm In\sb{x}Ga\sb{1-x}As/GaAs$, and the optical properties of the fabricated structures. Requirements on the electron beam lithography for each fabrication technique are presented, with emphasis on the capabilities of the lithography tool and parameters of the resist material, in particular, ZEP-520 and bilayers of PMMA. Photoluminescence measurements at 5 K were used to characterize the optical quality of the samples.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Panepucci, Roberto Ricardo

Contributors dc:contributor

• Adesida, Ilesanmi

• Engineering, Electronics and Electrical
• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1996 Panepucci, Roberto Ricardo

Language dc:language

eng

Identifier

9780591198515
AAI9712393
(UMI)AAI9712393

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/22789