Geometric and electronic structure of reconstructed semiconductor surfaces

The combination of high-resolution photoemission spectroscopy (PES) using synchrotron radiation, and reflection high-energy electron diffraction (RHEED), along with other techniques, have been used to examine the atomic-scale geometric and electronic properties of clean and adsorbate-covered semiconductor surfaces. The surfaces studied have been probed via core-level, valence band, and angle-resolved photoemission spectroscopy, and with the extended photoemission fine structure technique.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Carlisle, John Arthur

Contributors dc:contributor

• Chiang, Tai-Chang

• Chemistry, Physical
• Physics, Condensed Matter

Statement dc:rights

• Copyright 1993 Carlisle, John Arthur

Language dc:language

eng

Identifier

AAI9411576
(UMI)AAI9411576

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/22772