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University of Illinois at Urbana-Champaign
High-purity epitaxial growth and characterization of III-V compound semiconductors
Abstract
dc:descriptionThe growth and characterization of epitaxial indium gallium arsenide phosphide compound semiconductor films are described. Methods have been developed to improve the purity of both InP and GaAs and to better assess the crystalline homogeneity of the InGaAsP alloy system.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical and Computer Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2011
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Roth, Thomas John
- Contributors dc:contributor
-
- Stillman, Gregory E.
Subjects
dc:subject × 3Rights
dc:rights- Statement dc:rights
-
- Copyright 1989 Roth, Thomas John
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
-
AAI9011002
(UMI)AAI9011002 - OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/22720