Scanning tunneling microscopy of silicon(100) 2 x 1

The Si(100) 2 x 1 surface, a technologically important surface in microelectronics and silicon molecular beam epitaxy (MBE), has been studied with the scanning tunneling microscope (STM) to attempt to clear up the controversy that surrounds previous studies of this surface. To this end, an ultra-high vacuum (UHV) STM/surface science system has been designed and constructed to study semiconductor surfaces. Clean Si(100) 2 x 1 surfaces have been prepared and imaged with the STM. Atomic resolution images probing both the filled states and empty states indicate that the surface consists of statically buckled dimer rows.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Hubacek, Jerome S.

Contributors dc:contributor

• Lyding, Joseph W.

• Engineering, Electronics and Electrical
• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1992 Hubacek, Jerome S.

Language dc:language

eng

Identifier

AAI9215829
(UMI)AAI9215829

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/22687