Chemical vapor deposition of copper, copper(I) oxide, and silver from metal-organic precursors

Metal-organic chemical vapor deposition (MOCVD) from the tetrameric precursor copper(I) tert-butoxide, (Cu(O-t-Bu)) $\sb4$, results in the deposition of pure copper(I) oxide whiskers at 510 K and of copper metal with $\sim$2% oxygen contamination at 670 K. Quantitative analyses of the gaseous byproducts generated during the deposition, electron energy loss spectroscopy, and temperature programmed desorption experiments indicate that copper(I) oxide is formed by an elimination mechanism and copper metal is formed by deoxygenation of an initially deposited copper(I) oxide phase.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemistry

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Jeffries, Patrick Michael

Contributors dc:contributor

• Girolami, Gregory S.

• Chemistry, Inorganic
• Engineering, Materials Science

Statement dc:rights

• Copyright 1992 Jeffries, Patrick Michael

Language dc:language

eng

Identifier

AAI9236488
(UMI)AAI9236488

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/22496