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University of Illinois at Urbana-Champaign
Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to small-volume quantum well heterostructure lasers
Abstract
dc:description"In this work, the water-vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate small-volume semiconductor light-emitting devices. The oxidized material, native to the crystal, is mechanically and chemically stable. In addition, it is electrically insulating and has a low refractive index making it useful for defining optical cavities and current paths. The oxidation rate is sensitive to the Al composition of the material, permitting selective oxidation of ""buried"" high-Al-composition layers."
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical and Computer Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2011
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Ries, Michael John
- Contributors dc:contributor
-
- Holonyak, Nick, Jr.
Subjects
dc:subject × 2Rights
dc:rights- Statement dc:rights
-
- Copyright 1996 Ries, Michael John
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
-
9780591088380
AAI9702653
(UMI)AAI9702653 - OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/22399