Zero-field time-of-flight characterization of minority carrier transport in heavily carbon-doped gallium arsenide and indium gallium arsenide

Heavily doped p-type GaAs is important for both optical and electronic devices, and recently carbon has become the preferred base dopant for AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors (HBTs) due to its high solubility and low diffusivity in GaAs. The low diffusivity of carbon, relative to that of Be and Zn, has been demonstrated to lead to improvements in the stability of the base dopant profile and in AlGaAs/GaAs HBT reliability. Minority carrier electron diffusion coefficients and lifetimes have been measured in heavily doped p-type GaAs and In$\sb{0.53}$G$\sb{0.47}$As using the zero-field time-of-flight (ZFTOF) technique in structures that simulate the base transport in HBTs. To extract lifetimes and diffusion coefficients from the data, an analytical solution to the minority carrier diffusion equation is found, and the voltage and time derivative of the voltage are calculated using the short-circuit photocurrent and an equivalent circuit model. The calculated curves are then fit to the experimental data by adjusting the carrier lifetime and diffusion coefficient.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Colomb, Carolyn Marie

Contributors dc:contributor

• Stillman, Gregory E.

• Engineering, Electronics and Electrical
• Physics, Condensed Matter

Statement dc:rights

• Copyright 1993 Colomb, Carolyn Marie

Language dc:language

eng

Identifier

AAI9329004
(UMI)AAI9329004

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/22185