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University of Illinois at Urbana-Champaign
Analysis of and process development for high-frequency indium gallium phosphide/gallium arsenide heterojunction bipolar transistors
Abstract
dc:descriptionThe In$\rm\sb{0.5}Ga\sb{0.5}$P/GaAs materials system has been investigated for use in heterojunction bipolar transistor applications. This material possesses several properties which make it attractive as a potential replacement for AlGaAs as the wide band gap emitter material. These properties include the availability of highly selective etches, an energy band alignment favorable for high injection efficiency devices, and the absence of DX centers.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2011
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Hanson, Allen William
- Contributors dc:contributor
-
- Stillman, Gregory E.
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- Copyright 1994 Hanson, Allen William
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
-
AAI9503208
(UMI)AAI9503208 - OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/22174