Optical properties of III-V semiconductors

A GaAs-Al$\sb{0.22}$Ga$\sb{0.78}$As heterostructure was prepared and used as a multimode optical waveguide in order to measure the sub bandgap energy- and temperature-dependent refractive index of GaAs. Propagation constants for the individual modes were measured by exciting one mode at a time using a real-space diffraction grating coupler. The resulting eigenmode distributions were used to obtain the refractive index of GaAs at a matrix of sub bandgap photon energies (1.40 eV $<$ h$\nu <$ 1.50 eV) and temperatures (40 K $<$ T $<$ 300 K). Values for the temperature dispersion (dn/dT) at each photon energy, and the extrapolated refractive index at T = 0 K are presented. For the energy dispersion results, Sellmeier parameters including the long wavelength dielectric constant at each temperature are presented. The dominant error source in these measurements was uncertainty in the angular placement of the sample.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemistry

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Kisting, Scott Robert

Contributors dc:contributor

• Bohn, Paul W.

• Chemistry, Analytical

Statement dc:rights

• Copyright 1991 Kisting, Scott Robert

Language dc:language

eng

Identifier

AAI9210871
(UMI)AAI9210871

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21933